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KA100O015E-BJTT Datasheet, Samsung semiconductor

KA100O015E-BJTT sdram equivalent, 2cke ddp mobile ddr sdram.

KA100O015E-BJTT Avg. rating / M : 1.0 rating-11

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KA100O015E-BJTT Datasheet

Features and benefits


* Operating Temperature : -25°C ~ 85°C
* Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch
* Voltage Supply - 1.8V Device :.

Application

where product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM. NAND cell provides the most cost-effective solution for the solid state application market. A program operati.

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KA100O015E-BJTT Page 1 KA100O015E-BJTT Page 2 KA100O015E-BJTT Page 3

TAGS

KA100O015E-BJTT
2CKE
DDP
Mobile
DDR
SDRAM
KA101-01
KA101-10
KA101-54
Samsung semiconductor

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